?002 fairchild semiconductor corporation rfp12p08, RFP12P10 rev. b rfp12p08, RFP12P10 12a, 80v and 100v, 0.300 ohm, p-channel power mosfets the rfp12p08, and RFP12P10 are p-channel enhancement mode silicon gate power ?ld effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. formerly developmental type ta17511. features 12a, 80v and 100v ? ds(on) = 0.300 ? soa is power dissipation limited nanosecond switching speeds linear transfer characteristics high input impedance majority carrier device related literature - tb334 ?uidelines for soldering surface mount components to pc boards symbol packaging to-220ab ordering information part number package brand rfp12p08 to-220ab rfp12p08 RFP12P10 to-220ab RFP12P10 note: when ordering, include the entire part number. g d s source drain gate drain (tab) data sheet january 2002
?002 fairchild semiconductor corporation rfp12p08, RFP12P10 rev. b absolute maximum ratings t c = 25 o c, unless otherwise speci?d rfp12p08 RFP12P10 units drain to source voltage (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ds -80 -100 v drain to gate voltage (r gs = 20k ?) (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v dgr -80 -100 v continuous drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rms continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 12 12 a pulsed drain current (note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i dm 30 30 a gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gs 20 20 v maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 75 75 w linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 w/ o c operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 -55 to 150 o c maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l package body for 10s, see techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t pkg 300 260 300 260 o c o c caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. note: 1. t j = 25 o c to 125 o c. electrical speci?ations t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units drain to source breakdown voltage bv dss i d = 250 a, v gs = 0 rfp12p08 -80 - - v RFP12P10 -100 - - v gate threshold voltage v gs(th) v gs = v ds , i d = 250 a -2--4 v zero gate voltage drain current i dss v ds = rated bv dss , v gs = 0v - - 1 a v ds = 0.8 x rated bv dss , v gs = 0v, t c = 125 o c--25 a gate to source leakage current i gss v gs = 20v, v ds = 0 - - 100 na drain to source on voltage (note 2) v ds(on) i d = 12a, v gs = -10v - - -3.6 v drain to source on resistance (note 2) r ds(on) i d = 12a, v gs = -10v, (figures 6, 7) - - 0.300 ? turn-on delay time t d(on) i d 12a, v dd = 50v, r g = 50 ? , r l = 4.1 ? , v gs = -10v (figure 10) -1860 ns rise time t r - 90 175 ns turn-off delay time t d(off) - 144 275 ns fall time t f - 94 175 ns input capacitance c iss v gs = 0v, v ds = -25v, f = 1mhz (figure 9) - - 1500 pf output capacitance c oss - - 700 pf reverse transfer capacitance c rss - - 300 pf thermal resistance, junction to case r jc rfp12p08, RFP12P10 - - 1.67 o c/w source to drain diode speci?ations parameter symbol test conditions min typ max units source to drain diode voltage (note 2) v sd i sd = -12a - - 1.4 v diode reverse recovery time t rr i sd = -12a, di sd /dt = 100a/ s - 200 - ns notes: 2. pulse test: pulse width = 300 s max, duty cycle 2% 3. repetitive rating: pulse width limited by maximum junction temperature. rfp12p08, RFP12P10
?002 fairchild semiconductor corporation rfp12p08, RFP12P10 rev. b typical performance curves figure 1. normalized power dissipation vs case temperature figure 2. maximum continuous drain current vs case temperature figure 3. forward bias safe operating area figure 4. saturation characteristics figure 5. transfer characteristics figure 6. drain to source on resistance vs gate voltage and drain current 0 50 100 150 0 t c , case temperature ( o c) power dissipation multiplier 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) -8 -7 -6 -5 -4 -3 -2 -1 0 -12 -11 -10 -9 -13 -14 100 10 1 0.1 1 10 100 1000 i d , drain current (a) operation in this area limited by r ds(on) v ds , drain to source (v) t c = 25 o c dc i d max continuous t j = max rated rfp12p08 RFP12P10 30 20 10 0-2 -4 i d, drain current (a) v ds, drain to source voltage (v) pulse duration = 80 s t c = 25 o c v gs = -20v -6 -8 -10 v gs = -7v v gs = -8v v gs = -6v v gs = -5v v gs = -4v v gs = -3v v gs = -10v 40 0 v gs = -9v duty cycle = 0.5% max i ds(on), drain to source current (a) 20 12 4 0-2 -4 -6 -7 v gs, gate to source voltage (v) 0 v ds = -10v pulse duration = 80 s 125 o c -40 o c 125 o c 25 o c -40 o c 16 8 -3 -5 -8 duty cycle = 0.5% max drain to source on i d, drain current (a) 0.3 0.2 0.1 0 02 8 12 20 resistance ( ? ) 4 6 10 14 v gs = -10v pulse duration = 80 s 25 o c -40 o c 125 o c 18 16 0.4 duty cycle = 0.5% max rfp12p08, RFP12P10
?002 fairchild semiconductor corporation rfp12p08, RFP12P10 rev. b figure 7. normalized drain to source on resistance vs junction temperature figure 8. normalized gate threshold voltage vs junction temperature figure 9. capacitance vs drain to source voltage note: refer to fairchild application notes an7254 and an7260 figure 10. normalized switching waveforms for constant gate current test circuits and waveforms figure 11. switching time test circuit figure 12. resistive switching waveforms typical performance curves (continued) 1.5 1.0 0.5 -50 0 50 100 150 t j, junction temperature ( o c) normalized drain to source 2.0 on resistance 0 i d = 12a, v gs = -10v pulse duration = 80 s duty cycle = 0.5% max 1.2 1.0 -50 0 50 100 t j, junction temperature ( o c) normalized gate 0.9 0.8 0.7 1.1 1.3 150 v ds = v gs i d = 250 a threshold voltage 0.6 01020304050 c, capacitance ( p f) v ds, drain to source voltage (v) 2000 1600 400 800 0 2400 c iss c oss c rss 1200 v gs = 0v, f = 1mhz c iss = c gs + c gd c rss = c gd c oss c ds + c gd 0.75bv dss 0.75bv dss 0.50bv dss 0.25bv dss 0.25bv dss gate source voltage v dd = bv dss v dd = bv dss i g(ref) i g(act) 20 80 drain source i g(ref) i g(act) r l = 8.3 ? i g(ref) = 0.92ma v gs = -10v v ds , drain to source voltage (v) t, time ( s) v gs , gate to source voltage (v) 100 75 50 25 0 10 8 6 4 0 2 0.50bv dss voltage v gs r l r g dut + - v dd t d(on) t r 90% 10% v ds 90% t f t d(off) t off 90% 50% 50% 10% pulse width v gs t on 10% 0 0 rfp12p08, RFP12P10
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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